Puneet Kumar Mishra1, Amrita Rai1, Nitin Sharma2, Kanika Sharma3, Nitin Mittal4, Mohd Anul Haq5,*, Ilyas Khan6, ElSayed M. Tag El Din7
CMC-Computers, Materials & Continua, Vol.76, No.1, pp. 1309-1320, 2023, DOI:10.32604/cmc.2023.033828
- 08 June 2023
Abstract The fundamental advantages of carbon-based graphene material, such as its high tunnelling probability, symmetric band structure (linear dependence of the energy band on the wave direction), low effective mass, and characteristics of its 2D atomic layers, are the main focus of this research work. The impact of channel thickness, gate under-lap, asymmetric source/drain doping method, workfunction of gate contact, and High-K material on Graphene-based Tunnel Field Effect Transistor (TFET) is analyzed with 20 nm technology. Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material More >
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