Haneen D. Jabbar1,*, Makram A. Fakhri1,*, Mohammed Jalal Abdul Razzaq1, Omar S. Dahham2,3, Evan T. Salim4, Forat H. Alsultany5, U. Hashim6
Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698
- 31 October 2022
Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm2, and 24% hydrofluoric acid. The substrate exhibited two highly cubic… More >
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