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  • Open Access

    ARTICLE

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

    Mayyadah H. Mohsin1, Najwan H. Numan2, Evan T. Salim1,*, Makram A. Fakhri2,*

    Journal of Renewable Materials, Vol.9, No.9, pp. 1519-1530, 2021, DOI:10.32604/jrm.2021.015465

    Abstract A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd: YAG laser at two different laser wavelengths of 1064 nm and 532 nm. The structural, morphological, and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used laser. The structural result shows four different pecks at (111), (200), (220), and (311) planes related to Nano SiC. The transmission result presents that the optical energy gap value for the SiC nanostructure is depended on the wavelength of… More > Graphic Abstract

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

  • Open Access

    ARTICLE

    The Atomistic Study of Textured Polycrystalline Nanofilms

    I-L. Chang1, W.-C. Ding

    CMES-Computer Modeling in Engineering & Sciences, Vol.68, No.3, pp. 297-312, 2010, DOI:10.3970/cmes.2010.068.297

    Abstract Molecular dynamics method incorporating with parallel computing technique was employed to study the mechanical properties of textured polycrystalline nanofilms with fixed out-of-plane normal direction. The grain size and film thickness effects on both the elastic and plastic properties of the copper nanofilm were examined. It is shown from the simulation that the elastic and plastic properties (i.e., Young’s modulus, Poisson’s ratio, biaxial yield stress, etc) of textured polycrystalline nanofilms depend on the grain size and the film thickness. As the grain size of the nanofilm become larger, the Young’s modulus and biaxial yield stress increase but the Poisson’s ratio decreases.… More >

  • Open Access

    ARTICLE

    Stress Field Effects on Phonon Properties in Spatially Confined Semiconductor Nanostructures

    L.L. Zhu1,2,3, X.J. Zheng1,2

    CMC-Computers, Materials & Continua, Vol.18, No.3, pp. 301-320, 2010, DOI:10.3970/cmc.2010.018.301

    Abstract The phonon properties of spatially confined nanofilms under the preexisting stress fields are investigated theoretically by accounting for the confinement effects and acoustoelastic effects. Due to the spatial confinement in low-dimensional structures, the phonon dispersion relations, phonon group velocities as well as the phonon density of states are of significant difference with the ones in bulk structures. Here, the continuum elasticity theory is made use of to determine the phonon dispersion relations of shear modes (SH), dilatational modes (SA) and the flexural modes (AS), thus to analyze the contribution of stress fields on the phonon performance of confined nanofilms. Our… More >

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