K. Garikipati1, V.S. Rao2, M.Y. Hao3, E. Ibok4, I. de Wolf5, R. W. Dutton6
CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 65-84, 2000, DOI:10.3970/cmes.2000.001.065
Abstract This work is based upon a careful rendering of mechanics and mathematics to describe the phenomena that influence the stress engendered by the Shallow Trench Isolation process. The diffusion-reaction problem is posed in terms of fundamental mass balance laws. Finite strain kinematics is invoked to model the large expansion of SiO2, dielectrics are modelled as viscoelastic solids and annealing-induced density relaxation of SiO2 is incorporated as a history-dependent process. A levelset framework is used to describe the moving Si/SiO2 interface. Sophisticated finite element methods are employed to solve the mathematical equations posed for each phenomenon. These include More >
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