Xiaorong Zhao¹, Weili Cheng², Hongjin Zhu¹, Chunpeng Ge³, Gengyuan Zhou^{1, *}, Zhongjun Fu¹

CMC-Computers, Materials & Continua, Vol.64, No.2, pp. 1139-1151, 2020, DOI:10.32604/cmc.2020.010220

Abstract With the development of the times, people’s requirements for communication technology are becoming higher and higher. 4G communication technology has been unable to meet development needs, and 5G communication technology has emerged as the times require. This article proposes the design of a low-noise amplifier (LNA) that will be used in the 5G band of China Mobile Communications. A low noise amplifier for mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing Company (TSMC) 0.13 μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. The LNA employs self-cascode devices in currentreuse configuration to enable lower supply voltage operation… More >

Xiaorong Zhao¹, Hongjin Zhu¹, Peizhong Shi¹, Chunpeng Ge², Xiufang Qian^1,*, Honghui Fan¹, Zhongjun Fu¹

CMC-Computers, Materials & Continua, Vol.60, No.1, pp. 133-145, 2019, DOI:10.32604/cmc.2019.05661

Abstract With the rapid development of ultra-wideband communications, the design requirements of CMOS radio frequency integrated circuits have become increasingly high. Ultra-wideband (UWB) low noise amplifiers are a key component of the receiver front end. The paper designs a high power gain (S₂₁) and low noise figure (NF) common gate (CG) CMOS UWB low noise amplifier (LNA) with an operating frequency range between 3.1 GHz and 10.6 GHz. The circuit is designed by TSMC 0.13 μm RF CMOS technology. In order to achieve high gain and flat gain as well as low noise figure, the circuit uses many technologies. To improve… More >