C.J. Wordelman, N.R. Aluru, U. Ravaioli1
CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 121-126, 2000, DOI:10.3970/cmes.2000.001.121
Abstract This paper describes the application of the meshless Finite Point (FP) method to the solution of the nonlinear semiconductor Poisson equation. The FP method is a true meshless method which uses a weighted least-squares fit and point collocation. The nonlinearity of the semiconductor Poisson equation is treated by Newton-Raphson iteration, and sparse matrices are employed to store the shape function and coefficient matrices. Using examples in two- and three-dimensions (2- and 3-D) for a prototypical n-channel MOSFET, the FP method demonstrates promise both as a means of mesh enhancement and for treating problems where arbitrary More >
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