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  • Open Access

    PROCEEDINGS

    Modeling and Simulation of Irradiation Hardening and Creep in Multi Principal Component Alloys

    Yang Chen1, Jing Peng1, Shuo Wang1, Chao Jiang1, Jia Li1,*, Qihong Fang1,*

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.29, No.4, pp. 1-2, 2024, DOI:10.32604/icces.2024.012299

    Abstract Nuclear energy demands radiation-resistant metal materials. Multi-principal element alloys (MPEAs) show superior radiation resistance over traditional alloys due to lattice distortion, promising for advanced reactors. However, damage evolution and mechanical performance of irradiated MPEAs under loading are unclear, limiting long-term application. We investigated hardening behavior induced by irradiation defects like dislocation loops and voids in MPEAs using crystal plasticity models and experiments. Here, we developed i) a stochastic field theory-based discrete dislocation dynamics simulation. A novel cross-slip mechanism in irradiated crystals was unveiled through co-linear reactions between dislocations and diamond perfect loops [1]; ii) With… More >

  • Open Access

    ARTICLE

    Discrete Dislocation Dynamics Simulation of Interfacial Dislocation Network in Gamma/Gamma-Prime Microstructure of Ni-based Superalloys

    K. Yashiro1, Y. Nakashima1, Y. Tomita1

    CMES-Computer Modeling in Engineering & Sciences, Vol.11, No.2, pp. 73-80, 2006, DOI:10.3970/cmes.2006.011.073

    Abstract A simple back force model is proposed for a dislocation cutting into γ' precipitate, taking the work formaking and recovering an anti-phase boundary (APB) into account. The first dislocation, or a leading partial of a superdislocation, is acted upon by a back force whose magnitude is equal to the APB energy. The second dislocation, or a trailing partial of a superdislocation, is attracted by the APB with a force of the same magnitude. The model is encoded in the 3D discrete dislocation dynamics (DDD) code and applied to the cutting behavior of dislocations at a… More >

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