Koichi Kakimoto, Lijun Liu
FDMP-Fluid Dynamics & Materials Processing, Vol.2, No.3, pp. 167-174, 2006, DOI:10.3970/fdmp.2006.002.167
Abstract This paper deals with the investigation of the flow instability of molten silicon in a magnetic field during crystal growth by means of the Czochralski method. The flow exhibits a three-dimensional structure due to a transverse non-axisymmetric pattern of the magnetic field. The melt-crystal interface is found to be nearly two-dimensional. The azimuthal non-uniformity of the temperature field is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal. More >
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