Lei Zhang*, Dejian Yang, Lei Ren, Yun Cheng, Qiufeng Yan, Yinlong Yuan
Energy Engineering, Vol.118, No.4, pp. 1155-1170, 2021, DOI:10.32604/EE.2021.014549
- 31 May 2021
Abstract As a wide bandgap power electronics device, the SiC MOSFET has a lot of advantages over the traditional Si IGBT. Replacing the Si IGBT with the SiC MOSFET in the existing power electronics converter is an effective means to improve the performance and promote the upgrading of the traditional converter. Generally, in order to make full use of its advantages of the SiC MOSFET, the Si IGBT in the traditional power electronics circuit cannot be simply replaced by the SiC MOSFET, but the main circuit and the driver circuit need to be redesigned because the… More >