G. M. Liua, G. Hub, P. Tangc, L. L. Wua,d,*, X. Haoa,d, G. G. Zenga, W. W. Wanga, J. Q. Zhanga,d
Chalcogenide Letters, Vol.21, No.10, pp. 797-808, 2024, DOI:10.15251/CL.2024.2110.797
Abstract V-doped CdTe polycrystalline films can achieve both doping activation and defect
passivation by high-temperature CdCl2 heat treatment, but this requires simultaneous
modulation of the amount of CdCl2 introduced to obtain high-quality films. It is found that
increasing the CdCl2 introduction does not change the physical phase structure and lattice
constant of CdTe:As thin films, but promotes grain recrystallisation, and can promote the
formation of A-center, and inhibit the formation of Cd vacancy (VCd) defects, as well as the
formation of deep energy level defects. The results provide guidance for the improvement
of high-temperature CdCl2 heat treatment of More >