Xiaorong Zhao1, Hongjin Zhu1, Peizhong Shi1, Chunpeng Ge2, Xiufang Qian1,*, Honghui Fan1, Zhongjun Fu1
CMC-Computers, Materials & Continua, Vol.60, No.1, pp. 133-145, 2019, DOI:10.32604/cmc.2019.05661
Abstract With the rapid development of ultra-wideband communications, the design requirements of CMOS radio frequency integrated circuits have become increasingly high. Ultra-wideband (UWB) low noise amplifiers are a key component of the receiver front end. The paper designs a high power gain (S21) and low noise figure (NF) common gate (CG) CMOS UWB low noise amplifier (LNA) with an operating frequency range between 3.1 GHz and 10.6 GHz. The circuit is designed by TSMC 0.13 μm RF CMOS technology. In order to achieve high gain and flat gain as well as low noise figure, the circuit uses… More >
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