P. Reena Monica1,*, V. T. Sreedevi2
CMES-Computer Modeling in Engineering & Sciences, Vol.119, No.3, pp. 577-591, 2019, DOI:10.32604/cmes.2019.04718
Abstract A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB CNTFETs) is presented. Suppression of ambipolar conduction in SB CNTFETs is imperative in order to establish them as the future of IC technology. The ambipolar nature of SB CNTFETs leads to a great amount of leakage current. Employing a gate oxide dielectric of thickness, tox~50 nm suppresses the ambipolar behavior. In an SB CNTFET, it is the electric field at the source/drain contacts that control the conductance and the band… More >
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