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  • Open Access

    ARTICLE

    Fabrication and characterization of Se66S44-xAsx thin films chalcogenide

    D. M. A. Latiff, B. A. Ahmed, S. M. Ali, K. A. Jasim*

    Chalcogenide Letters, Vol.22, No.6, pp. 521-528, 2025, DOI:10.15251/CL.2025.226.521

    Abstract In this paper, the effect of sulfur substitution by arsenic on the structural, optical properties of thin films of the trivalent chalcogenide Se66S44-xAsx at different concentrations (where x = 0, 8, 16, and 24 at %) was studied. Thin films with a thickness of (300±10 nm) were prepared using thermal evaporation of bulk samples. Structural examinations were performed using XRD and AFM techniques. All the studied film samples were amorphous in structure and the intensity of the crystalline parts was high in the range of 10-40. Also, in Atomic Force Microscopy (AFM). It was found that… More >

  • Open Access

    ARTICLE

    The influence of substrate temperature on structural and optical characterization of nanostructured SnS thin films

    A. A. Mansoura, H. A. Salmanb, S. A. Abdul Wahabc, N. F. Habubic, S. S. Chiadd,*, Z. S. A. Mosac, Y. H. Kadhimd

    Chalcogenide Letters, Vol.21, No.3, pp. 275-284, 2024, DOI:10.15251/CL.2024.213.275

    Abstract To grow SnS films, the spray pyrolysis deposition (SPD) process is applied. The films were deposited at various substrate temperatures (ST) of 400, 450, and 500 degrees Celsius for two hours. Through XRD analysis, the impact of ST on the structure was investigated. Peak (113) crystallite sizes were 13.16, 21.48, and 38.87 nm, respectively, at base temperatures of (400, 450, and 500) ℃. The effect of ST on the structure was examined using XRD analysis. A predominat Peak at (113) plane. The crystallite sizes at base temperatures of (400, 450, and 500) ℃ were 13.16, 21.48, More >

  • Open Access

    ARTICLE

    Influence of annealing temperature on nano crystalline description for CuZnS thin films

    A. J. Soud, Bushra K. H. Al-Maiyaly

    Chalcogenide Letters, Vol.21, No.5, pp. 385-394, 2024, DOI:10.15251/CL.2024.215.385

    Abstract Copper Zinc Sulphide (Cu0.5Zn0.5S) alloy and thin films were fabricated in a vacuum. Nano crystallized (CZS) film with thick 450±20 nm was deposit at substrates glasses using thermal evaporation technique below ~ 2 × 10−5 mbar vacuum to investigated the films structural, morphological and optical properties depended on annealing temperatures ( as-deposited, 423, 523 and 623) K for one hour. The influences annealed temperature on structurally besides morphologically characteristics on these films were investigated using XRD and AFM respectively. XRD confirms the formation a mixed hexagonal phase of CuS-ZnS in (102) direction with polycrystalline in nature More >

  • Open Access

    ARTICLE

    Improvement of porous silicon by adding CIGS NPs prepared by laser ablation method in water

    H. R. Hassan, A. N. Abd*, M. J. M. Ali

    Chalcogenide Letters, Vol.21, No.11, pp. 855-866, 2024, DOI:10.15251/CL.2024.2111.855

    Abstract Using a laser energy of no more than 600 mJ/pulse and a maximum of 500 pulses, this work selectively produced pure copper, indium, gallium, and selenide (CIGS) NPs using a laser ablation method with distilled water and n-type porous silicon prepared by the photoelectron etching method. The material exhibits quantum dot behavior, according to experimental investigations. Porous silicone bases were produced using a current density of 10 mA/cm2 and an etching time of 15 min. Tests XRD, SEM, AFM, FTIR, UV, PL were conducted for the porous silicone and CIGS NPs to ensure that each More >

  • Open Access

    PROCEEDINGS

    Explore Wetting Dynamics at Micro and Nano Scales: Applications and Progress of Long-Needle Atomic Force Microscope

    Dongshi Guan1,2,*

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.29, No.1, pp. 1-1, 2024, DOI:10.32604/icces.2024.011291

    Abstract Contact line pinning and the corresponding contact angle hysteresis (CAH) are important interfacial phenomena that occur in nature and play a significant role in many industrial processes, such as surface coating, ink-jet printing, and immersion lithography. Traditional optical methods face limitations due to the optical diffraction limit, making it difficult to directly measure flow and interface phenomena at the micro- or nanoscale. However, atomic force microscopy (AFM) offers a solution by enabling precise manipulation and force measurements at micro and nano scales. The AFM-based microrheometer, which is assembled with a long-needle probe, can be used More >

  • Open Access

    ARTICLE

    Effect of pH values on the structural, morphological and sensing properties of ZnO nanostructure

    A. Zaidia, K. Tiwaria, R. R. Awasthib, K. C. Dubeyc,*

    Chalcogenide Letters, Vol.20, No.1, pp. 33-41, 2023, DOI:10.15251/CL.2023.201.33

    Abstract In the present investigation ZnO thin films have been prepared by sol-gel spin coating technique with different pH values. The effect of pH values of precursor solution on the crystal structural, morphological and humidity sensing properties of ZnO nanostructures have been investigated using different characterization technique. The crystal structure and phase analysis has been examined by powder X-ray diffraction (PXRD) technique. The PXRD pattern clearly revealed the ZnO thin films have hexagonal wurtzite crystal structure. The average crystallite size of ZnO thin films have been calculated using Scherer formula and found to be ~24 nm… More >

  • Open Access

    ARTICLE

    Physical properties of Mg doped ZnS thin films via spray pyrolysis

    R. S. Alia,*, H. S. Rasheedb, N. D. Abdulameerc, N. F. Habubid, S. S. Chiadb

    Chalcogenide Letters, Vol.20, No.3, pp. 187-196, 2023, DOI:10.15251/CL.2023.203.187

    Abstract Chemical spray pyrolysis (CSP) was utilized to create pure Zinc Sulfide (ZnS) and magnesium (Mg) doped thin films on a clean glass substrate at a temperature equal to 400°C. X-ray diffraction test revealed a cubic wurtzite crystal structure with average crystallite sizes of 10.99 and 12.27 nm for ZnS and ZnS: Mg, respectively. XRD analysis of the doped films revealed a polycrystalline structure with a predominant peak along the (220) plane and additional peaks along the (111), (200), and (222) planes. The grain size raised from 10.99 to 12.27 nm as a result of the More >

  • Open Access

    ARTICLE

    Structural, morphology and optical properties studies of Ni doped CdSe thin films

    A. J. Jarjees Alsoofya, R. S. Alib,*, Z. S. A. Mosac, N. F. Habubid, S. S. Chiade

    Chalcogenide Letters, Vol.20, No.5, pp. 367-376, 2023, DOI:10.15251/CL.2023.205.367

    Abstract Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance More >

  • Open Access

    ARTICLE

    Fabrication and investigation of zinc telluride thin films

    R. H. Athab, B. H. Hussein*

    Chalcogenide Letters, Vol.20, No.7, pp. 477-485, 2023, DOI:10.15251/CL.2023.207.477

    Abstract Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of More >

  • Open Access

    ARTICLE

    Structural and device fabrication of 2D-MoS2 thin film

    R. Singha,*, S. Kimothib, M. V. Singhc, U. Ranid, A. S. Vermad,e,*

    Chalcogenide Letters, Vol.20, No.8, pp. 573-578, 2023, DOI:10.15251/CL.2023.208.573

    Abstract In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 ℃ for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p-type silicon. Thereafter, More >

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