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Effect of man-made electromagnetic fields on common Brassicaceae Lepidium sativum (cress d’Alinois) seed germination: a preliminary replication study

by Cammaerts MC, O Johansson

1 Faculté des sciences, DBO, CP 160/12, Université Libre de Bruxelles, 50, Av. F. D. Roosevelt, 1050 Brussels, Belgium.
2 The Experimental Dermatology Unit, Department of Neuroscience, Karolinska Institute, SE-171 77 Stockholm, Sweden.

* Corresponding Author:Address Correspondence to: Marie-Claire Cammaerts, e-mail: email

Phyton-International Journal of Experimental Botany 2015, 84(1), 132-137. https://doi.org/10.32604/phyton.2015.84.132

Abstract

Under high levels of radiation (70-100 µW/m2 =175 mV/m), seeds of Brassicaceae Lepidium sativum (cress d’Alinois) never germinated. In fact, the first step of seeds’ germination ‒ e.g. imbibitions of germinal cells ‒ could not occur under radiation, while inside the humid compost such imbibitions occurred and roots slightly developed. When removed from the electromagnetic field, seeds germinated normally. The radiation was, thus, most likely the cause of the non-occurrence of the seeds’ imbibitions and germination.

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APA Style
MC, C., Johansson, O. (2015). Effect of man-made electromagnetic fields on common brassicaceae lepidium sativum (cress d’alinois) seed germination: a preliminary replication study. Phyton-International Journal of Experimental Botany, 84(1), 132-137. https://doi.org/10.32604/phyton.2015.84.132
Vancouver Style
MC C, Johansson O. Effect of man-made electromagnetic fields on common brassicaceae lepidium sativum (cress d’alinois) seed germination: a preliminary replication study. Phyton-Int J Exp Bot. 2015;84(1):132-137 https://doi.org/10.32604/phyton.2015.84.132
IEEE Style
C. MC and O. Johansson, “Effect of man-made electromagnetic fields on common Brassicaceae Lepidium sativum (cress d’Alinois) seed germination: a preliminary replication study,” Phyton-Int. J. Exp. Bot., vol. 84, no. 1, pp. 132-137, 2015. https://doi.org/10.32604/phyton.2015.84.132

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cc Copyright © 2015 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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