Open Access

ARTICLE

Pulse Laser Deposition of HfO₂ Nanoporous-Like Structure, Physical Properties for Device Fabrication

Shams B. Ali¹, Sarmad Fawzi Hamza Alhasan¹, Evan T. Salim^2,*, Forat H. Alsultany³, Omar S. Dahham^4,5

1 Laser and Optoelectronic Engineering Department, University of Technology, Baghdad, Iraq
2 Applied Science Department, University of Technology, Baghdad, Iraq
3 Al-Mustaqbal University College, Department of Medical Physics, Hillah, Iraq
4 Center of Excellence Geopolymer and Green Technology, Faculty of Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
5 Department of Civil Engineering, College of Engineering, Cihan University-Erbil, Kurdistan Region, Iraq

* Corresponding Author: Evan T. Salim. Email:

Journal of Renewable Materials 2022, 10(11), 2819-2834. https://doi.org/10.32604/jrm.2022.021609

Received 23 January 2022; Accepted 17 March 2022; Issue published 29 June 2022

Abstract

The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO₂) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO₂, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO₂/p-Si Schottky barrier diode where the nanostructured HfO₂ films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO₂ films was observed to vary between 4.9 and 5.3 eV, with a value of roughly 5.3 eV at the optimal preparation condition. The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about (0.3 nm). With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. The diode manufactured at 600°C, in particular, had a higher ideality factor value (n = 3.2).

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Keywords

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