Open Access

ARTICLE

Molecular Beam Epitaxial Growth and Device Characterization of AlGaN Nanowire Ultraviolet-B Light-Emitting Diodes

M. Rajan Philip¹, T. H. Q. Bui¹, D. D. Choudhary¹, M. Djavid¹, P. Vu, T. T. Pham², H.-D. Nguyen³, H. P. T Nguyen^2,4*

1 Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Martin Luther King Boulevard, Newark, New Jersey, 07102, United States.
2 Faculty of Applied Sciences, Ho Chi Minh University of Technology, Vietnam National University in Ho Chi Minh City, 268 Ly Thuong Kiet, Ward 14, District 10, Ho Chi Minh City, 70001, Vietnam.
3 Vietnam Academy of Science and Technology, Institute of Applied Materials Science, 1 Mac Dinh Chi Street, District 1, Ho Chi Minh City, 70001, Vietnam.
⁴ Electronic Imaging Center, New Jersey Institute of Technology, 323 Martin Luther King Boulevard, Newark, New Jersey, 07102, United States.
* Corresponding Author: Hieu P. T. Nguyen. hieu.p.nguyen@njit.edu; Phone: +1-973-596-3523.