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ABSTRACT

Fatigue Crack Growth Simulation using S-version FEM

by M. Kikuchi1, Y. Wada2, A. Utsunomiya3, Y. Li4

Tokyo University of Scienceus, Japan
Suwa Tokyo University of Science, Japan
Graduation school of Tokyo University of Science, Japan
Northwestern Polytechnical University, People’s Republic of China

The International Conference on Computational & Experimental Engineering and Sciences 2008, 8(2), 67-72. https://doi.org/10.3970/icces.2008.008.067

Abstract

Fatigue crack growth under mixed mode loading conditions is simulated using S-FEM. By using S-FEM technique, only local mesh should be re-meshed and it becomes easy to simulate crack growth. By combining with auto-meshing technique, local mesh is re-meshed automatically, and curved crack path is modeled easily. Three dimensional surface crack problem is solved by this technique. Pure mode I crack and slant crack problems are solved, and fatigue crack growth processes are simulated. The change of aspect ratio of surface crack and distributions of stress intensity factor along crack front are evaluated and discussed.

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APA Style
Kikuchi, M., Wada, Y., Utsunomiya, A., Li, Y. (2008). Fatigue crack growth simulation using s-version FEM. The International Conference on Computational & Experimental Engineering and Sciences, 8(2), 67-72. https://doi.org/10.3970/icces.2008.008.067
Vancouver Style
Kikuchi M, Wada Y, Utsunomiya A, Li Y. Fatigue crack growth simulation using s-version FEM. Int Conf Comput Exp Eng Sciences . 2008;8(2):67-72 https://doi.org/10.3970/icces.2008.008.067
IEEE Style
M. Kikuchi, Y. Wada, A. Utsunomiya, and Y. Li, “Fatigue Crack Growth Simulation using S-version FEM,” Int. Conf. Comput. Exp. Eng. Sciences , vol. 8, no. 2, pp. 67-72, 2008. https://doi.org/10.3970/icces.2008.008.067



cc Copyright © 2008 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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