Mixed Finite Element Approach for Semiconductor Structures
Qiufeng Yang1, Xudong Li2, Zhaowei Liu3, Feng Jin1,*, Yilin Qu1,*
The International Conference on Computational & Experimental Engineering and Sciences, Vol.26, No.3, pp. 1-2, 2023, DOI:10.32604/icces.2023.09073
Abstract Compared to piezoelectric effects restricted to noncentrosymmetric crystalline structures, flexoelectric
effects exist universally in all crystalline structures [1,2]. Meanwhile, some crystals, say silicon, are also
semiconductive, which raises interest in studying the interactions between mechanical fields and mobile
charges in semiconductors with consideration of piezoelectricity or flexoelectricity [3,4]. In order to explain
these coupling effects, macroscopic theories on elastic semiconductors considering piezoelectricity or
flexoelectricity were proposed by Yang and co-authors [5,6]. For piezoelectric semiconductors, the
formulation of finite elements is relatively straightforward since the governing partial derivative equation
(PDE) is twice-order. As for elastic semiconductors… More >