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Atomistic Migration Mechanisms of [1210] Symmetric Tilt Grain Boundaries in Magnesium

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1 Department of Mechanics, Sichuan University, Chengdu, 610065, China

* Corresponding Author: Haidong Fan. Email: email

The International Conference on Computational & Experimental Engineering and Sciences 2023, 25(3), 1-1. https://doi.org/10.32604/icces.2023.010110

Abstract

Grain boundary (GB) is an important microstructure and plays a vital role in the mechanical properties of polycrystalline materials by GB migration and sliding. In this work, molecular dynamic (MD) simulations were performed to investigate the migration mechanisms of symmetric tilt grain boundaries (STGBs) in magnesium. A total of 15 STGBs with the rotation angle θ from 0° to 90° were studied under a pure shear loading. The results show that the GB migration mechanisms are significantly influenced by the GB structure. For small angle STGBs (θ<28°), the GB migration is mediated by twin nucleation from GB and subsequent twin growth. For large angle STGBs (θ>83°), the GB migration is achieved by the glide of GB dislocations. The medium angle STGBs (28°<θ<83°), which are the majority of studied STGBs, were observed to be transformed into twin boundary (TB) by emitting lattice dislocations/stacking faults (SFs) during migration. The migration mechanisms for medium angle STGBs can be explained by two rules: GB decomposition and emission of lattice dislocations/SFs. This work provides atomic mechanisms on the GB migration, which are important for understanding the GB behaviors and mechanical properties in magnesium.

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APA Style
Xu, C., Fan, H. (2023). Atomistic migration mechanisms of [1210] symmetric tilt grain boundaries in magnesium. The International Conference on Computational & Experimental Engineering and Sciences, 25(3), 1-1. https://doi.org/10.32604/icces.2023.010110
Vancouver Style
Xu C, Fan H. Atomistic migration mechanisms of [1210] symmetric tilt grain boundaries in magnesium. Int Conf Comput Exp Eng Sciences . 2023;25(3):1-1 https://doi.org/10.32604/icces.2023.010110
IEEE Style
C. Xu and H. Fan, “Atomistic Migration Mechanisms of [1210] Symmetric Tilt Grain Boundaries in Magnesium,” Int. Conf. Comput. Exp. Eng. Sciences , vol. 25, no. 3, pp. 1-1, 2023. https://doi.org/10.32604/icces.2023.010110



cc Copyright © 2023 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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