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Atomistic Migration Mechanisms of [1210] Symmetric Tilt Grain Boundaries in Magnesium
Chuanlong Xu1, Haidong Fan1,*
1 Department of Mechanics, Sichuan University, Chengdu, 610065, China
* Corresponding Author: Haidong Fan. Email:
The International Conference on Computational & Experimental Engineering and Sciences 2023, 25(3), 1-1. https://doi.org/10.32604/icces.2023.010110
Abstract
Grain boundary (GB) is an important microstructure and plays a vital role in the mechanical properties of
polycrystalline materials by GB migration and sliding. In this work, molecular dynamic (MD) simulations
were performed to investigate the migration mechanisms of
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symmetric tilt grain boundaries
(STGBs) in magnesium. A total of 15 STGBs with the rotation angle θ from 0° to 90° were studied under a
pure shear loading. The results show that the GB migration mechanisms are significantly influenced by the
GB structure. For small angle STGBs (θ<28°), the GB migration is mediated by twin nucleation from GB and
subsequent twin growth. For large angle STGBs (θ>83°), the GB migration is achieved by the glide of GB
dislocations. The medium angle STGBs (28°<θ<83°), which are the majority of studied STGBs, were observed
to be transformed into twin boundary (TB) by emitting lattice dislocations/stacking faults (SFs) during
migration. The migration mechanisms for medium angle STGBs can be explained by two rules: GB
decomposition and emission of lattice dislocations/SFs. This work provides atomic mechanisms on the GB
migration, which are important for understanding the GB behaviors and mechanical properties in
magnesium.
Keywords
Cite This Article
APA Style
Xu, C., Fan, H. (2023). Atomistic migration mechanisms of [1210] symmetric tilt grain boundaries in magnesium.
The International Conference on Computational & Experimental Engineering and Sciences,
25(3), 1–1.
https://doi.org/10.32604/icces.2023.010110
IEEE Style
C. Xu and H. Fan, “Atomistic Migration Mechanisms of [1210] Symmetric Tilt Grain Boundaries in Magnesium,”
Int. Conf. Comput. Exp. Eng. Sciences, vol. 25, no. 3, pp. 1–1, 2023.
https://doi.org/10.32604/icces.2023.010110
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Copyright © 2023 The Author(s). Published by Tech Science Press.
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