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ABSTRACT

Free vibrations of magnetoelectric bimorph beam devices by third order shear deformation theory

A. Alaimo1, A. Milazzo1, C. Orlando1

Dipartimento di Ingegneria Strutturale, Aerospaziale e Geotecnica, Universitá di Palermo, Italy.

The International Conference on Computational & Experimental Engineering and Sciences 2010, 15(4), 137-144. https://doi.org/10.3970/icces.2010.015.137

Abstract

The axial and flexural natural frequencies of magneto-electro-elastic bimorph beam devices are analyzed in the framework of the third-order shear deformation theory (TSDT). Although the assumption of parabolic transverse shear strain distribution along the thickness leads to higher order stress resultants the use of the TSDT allows to avoid the need for shear correction factor. Moreover, since the electric and magnetic potentials strictly depend on the shear strains, a more accurate modeling of the magneto-electric coupling can be achieved by expanding the kinematical model up to the cubic term. The natural frequencies for different mechanical boundary conditions are computed by varying the magnetoelectric bimorph configuration. The results are compared to those obtained by a first-order shear deformation theory (FSTD).

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APA Style
Alaimo, A., Milazzo, A., Orlando, C. (2010). Free vibrations of magnetoelectric bimorph beam devices by third order shear deformation theory. The International Conference on Computational & Experimental Engineering and Sciences, 15(4), 137-144. https://doi.org/10.3970/icces.2010.015.137
Vancouver Style
Alaimo A, Milazzo A, Orlando C. Free vibrations of magnetoelectric bimorph beam devices by third order shear deformation theory. Int Conf Comput Exp Eng Sciences . 2010;15(4):137-144 https://doi.org/10.3970/icces.2010.015.137
IEEE Style
A. Alaimo, A. Milazzo, and C. Orlando, “Free vibrations of magnetoelectric bimorph beam devices by third order shear deformation theory,” Int. Conf. Comput. Exp. Eng. Sciences , vol. 15, no. 4, pp. 137-144, 2010. https://doi.org/10.3970/icces.2010.015.137



cc Copyright © 2010 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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