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A Numerical Simulation Study of Silicon Dissolution under Magnetic Field

by A. Kidess1, N. Armour1, S. Dost1

Crystal Growth Laboratory, University of Victoria, Victoria, BC Canada V8W 3P6
Corresponding Author: sdost@me.uvic.ca; Tel: +1 250 721 8898, Fax: +1 250 721 6294.

Fluid Dynamics & Materials Processing 2011, 7(1), 29-56. https://doi.org/10.3970/fdmp.2011.007.029

Abstract

When a metallic liquid is subject to strong magnetic body forces, the issues of convergence and numerical stability may arise in numerical simulations. Handling of magnetic body force terms needs care. In this work we have studied two open codes and discussed the related issues. Magnetic force and mass transport terms were added to these codes. Handling the stability issues was discussed. The developed systems were validated by two benchmark cases. Then, the dissolution process of silicon into the germanium melt was selected as an application. The objective was the numerical study of the dissolution process with and without the application of an applied static magnetic field to examine the conditions used in experiments. The simulation results agree with experiments in both cases in predicting concentration distribution in the melt. However, they do not predict the experimentally observed enhanced dissolution structure near the ampoule wall along the source/melt interface under magnetic field.

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APA Style
Kidess, A., Armour, N., Dost, S. (2011). A numerical simulation study of silicon dissolution under magnetic field. Fluid Dynamics & Materials Processing, 7(1), 29-56. https://doi.org/10.3970/fdmp.2011.007.029
Vancouver Style
Kidess A, Armour N, Dost S. A numerical simulation study of silicon dissolution under magnetic field. Fluid Dyn Mater Proc. 2011;7(1):29-56 https://doi.org/10.3970/fdmp.2011.007.029
IEEE Style
A. Kidess, N. Armour, and S. Dost, “A Numerical Simulation Study of Silicon Dissolution under Magnetic Field,” Fluid Dyn. Mater. Proc., vol. 7, no. 1, pp. 29-56, 2011. https://doi.org/10.3970/fdmp.2011.007.029



cc Copyright © 2011 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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