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Flow Instability of Silicon Melt in Magnetic Fields
Kyushu University, Kasuga, Fukuoka, JAPAN
Fluid Dynamics & Materials Processing 2006, 2(3), 167-174. https://doi.org/10.3970/fdmp.2006.002.167
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This paper deals with the investigation of the flow instability of molten silicon in a magnetic field during crystal growth by means of the Czochralski method. The flow exhibits a three-dimensional structure due to a transverse non-axisymmetric pattern of the magnetic field. The melt-crystal interface is found to be nearly two-dimensional. The azimuthal non-uniformity of the temperature field is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal.Keywords
Magnetic fields, Computer simulation, Global modeling, Czochralski method, Semiconductor silicon.
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APA Style
Kakimoto, K., Liu, L. (2006). Flow Instability of Silicon Melt in Magnetic Fields. Fluid Dynamics & Materials Processing, 2(3), 167–174. https://doi.org/10.3970/fdmp.2006.002.167
Vancouver Style
Kakimoto K, Liu L. Flow Instability of Silicon Melt in Magnetic Fields. Fluid Dyn Mater Proc. 2006;2(3):167–174. https://doi.org/10.3970/fdmp.2006.002.167
IEEE Style
K. Kakimoto and L. Liu, “Flow Instability of Silicon Melt in Magnetic Fields,” Fluid Dyn. Mater. Proc., vol. 2, no. 3, pp. 167–174, 2006. https://doi.org/10.3970/fdmp.2006.002.167
Copyright © 2006 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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