Open Access

ARTICLE

The Method of the SiC MOSFET Replacing the Si IGBT in the Traditional Power Electronics Converter without Redesigning the Main Circuit and the Driver Circuit

Lei Zhang^*, Dejian Yang, Lei Ren, Yun Cheng, Qiufeng Yan, Yinlong Yuan

School of Electrical Engineering, Nantong University, Nantong, 226019, China

* Corresponding Author: Lei Zhang. Email:

Energy Engineering 2021, 118(4), 1155-1170. https://doi.org/10.32604/EE.2021.014549

Received 07 October 2020; Accepted 02 December 2020; Issue published 31 May 2021

Abstract

As a wide bandgap power electronics device, the SiC MOSFET has a lot of advantages over the traditional Si IGBT. Replacing the Si IGBT with the SiC MOSFET in the existing power electronics converter is an effective means to improve the performance and promote the upgrading of the traditional converter. Generally, in order to make full use of its advantages of the SiC MOSFET, the Si IGBT in the traditional power electronics circuit cannot be simply replaced by the SiC MOSFET, but the main circuit and the driver circuit need to be redesigned because the oscillation problem and the cross-talk problem caused by the parasitic parameter are very serious when the SiC MOSFET switches. However, considering the low cost and the short cycle requirement of the equipment development, it is often difficult to redesign the circuit hardware structure of all converters. In order to resolve this contradiction, a ferrite bead based method is proposed in this paper. Through this method, without redesigning the hardware structure of the main circuit and the driver circuit, the SiC MOSFET can be used to replace the Si-based power electronics device directly, and the loss of the converter can be reduced with small oscillation. Finally, the effectiveness of the proposed method is proved by experiments.

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Keywords

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