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Peridynamic Simulation of Electromigration

Walter Gerstle1, Stewart Silling2, David Read3, Vinod Tewary4, Richard Lehoucq5

University of New Mexico
Sandia National Laboratories
National Institute of Standards and Technology
National Institute of Standards and Technology
Sandia National Laboratories

Computers, Materials & Continua 2008, 8(2), 75-92. https://doi.org/10.3970/cmc.2008.008.075

Abstract

A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be analyzed in a systematic and unified manner. Interfacial behavior between dissimilar crystallites and materials can also be handled in a natural way. A computational implementation of the theoretical framework is proposed, and a one-dimensional example is presented.

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APA Style
Gerstle, W., Silling, S., Read, D., Tewary, V., Lehoucq, R. (2008). Peridynamic simulation of electromigration. Computers, Materials & Continua, 8(2), 75-92. https://doi.org/10.3970/cmc.2008.008.075
Vancouver Style
Gerstle W, Silling S, Read D, Tewary V, Lehoucq R. Peridynamic simulation of electromigration. Comput Mater Contin. 2008;8(2):75-92 https://doi.org/10.3970/cmc.2008.008.075
IEEE Style
W. Gerstle, S. Silling, D. Read, V. Tewary, and R. Lehoucq, “Peridynamic Simulation of Electromigration,” Comput. Mater. Contin., vol. 8, no. 2, pp. 75-92, 2008. https://doi.org/10.3970/cmc.2008.008.075



cc Copyright © 2008 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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