Vol.8, No.2, 2008, pp.75-92, doi:10.3970/cmc.2008.008.075
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ARTICLE
Peridynamic Simulation of Electromigration
  • Walter Gerstle1, Stewart Silling2, David Read3, Vinod Tewary4, Richard Lehoucq5
University of New Mexico
Sandia National Laboratories
National Institute of Standards and Technology
National Institute of Standards and Technology
Sandia National Laboratories
Abstract
A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat transfer, electrical potential distribution, and vacancy diffusion. The dynamics of void and crack formation, and hillock and whisker growth can potentially be modeled. The framework can potentially be applied at several modeling scales: atomistic, crystallite, multiple crystallite, and macro. The conceptual simplicity of the model promises to permit many phenomena observed in microchips, including electromigration, thermo-mechanical crack formation, and fatigue crack formation, to be analyzed in a systematic and unified manner. Interfacial behavior between dissimilar crystallites and materials can also be handled in a natural way. A computational implementation of the theoretical framework is proposed, and a one-dimensional example is presented.
Keywords
computational simulation, cracks, diffusion, electromigration, hillocks, metallic thin films, microelectromechanical systems, multi-physics, multi-scale, peridynamic, voids.
Cite This Article
W. . Gerstle, S. . Silling, D. . Read, V. . Tewary and R. . Lehoucq, "Peridynamic simulation of electromigration," Computers, Materials & Continua, vol. 8, no.2, pp. 75–92, 2008.
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