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ARTICLE

Paraelectric Doping Simultaneously Improves the Field Frequency Adaptability and Dielectric Properties of Ferroelectric Materials: A Phase-Field Study

by Zhi Wang¹, Jinming Cao¹, Zhonglei Liu¹, Yuhong Zhao^1,2,3,*

1 School of Materials Science and Engineering, Collaborative Innovation Center of Ministry of Education and Shanxi Province for High-Performance Al/Mg Alloy Materials, North University of China, Taiyuan, 030051, China
2 Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
3 Institute of Materials Intelligent Technology, Liaoning Academy of Materials, Shenyang, 110004, China

* Corresponding Author: Yuhong Zhao. Email:

(This article belongs to the Special Issue: Multiscale Computational Methods for Advanced Materials and Structures)

Computers, Materials & Continua 2024, 81(1), 213-228. https://doi.org/10.32604/cmc.2024.055169

Received 19 June 2024; Accepted 13 September 2024; Issue published 15 October 2024

Abstract

Recent years, the polarization response of ferroelectrics has been entirely studied. However, it is found that the polarization may disappear gradually with the continually applied of electric field. In this paper, taking K_0.48Na_0.52NbO₃(KNN) as an example, it was demonstrated that the residual polarization began to decrease when the electric field frequency increased to a certain extent using a phase-field methods. The results showed that the content of out-of-plane domains increased first and then decreased with the increase of applied electric field frequency, the maximum polarization disappeared at high frequencies, and the hysteresis loop became elliptical. In order to further study the abnormal changes of hysteresis loops of ferroelectrics under high electric field frequency, we analyzed the hysteresis loop and dielectric response of solid solution 0.1SrTiO₃-0.9K_0.48Na_0.52NbO₃. It was found that the doped hysteresis loop maintained its shape at higher frequency and the dielectric constant increased. This kind of doping has a higher field frequency adaptability, which has a key guiding role in improving the dielectric properties of ferroelectric thin films and expanding the frequency application range of ferroelectric nano memory.

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Keywords

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