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Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Jasurbek Gulomov1,*, Oussama Accouche2, Rayimjon Aliev1, Marc AZAB2, Irodakhon Gulomova1
1 Renewable Energy Source Laboratory, Andijan State University, Uzbekistan
2 College of Engineering and Technology, American University of the Middle East, Kuwait
* Corresponding Author: Jasurbek Gulomov. Email:

Computers, Materials & Continua 2023, 74(1), 575-590. https://doi.org/10.32604/cmc.2023.031289

Received 14 April 2022; Accepted 21 June 2022; Issue published 22 September 2022

Abstract

Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH3NH3PbI3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH3NH3PbI3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH3NH3PbI3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH3NH3PbI3/p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness. It has been found that the short circuit current for CH3NH3PbI3/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH3NH3PbI3/p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH3NH3PbI3/p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm2 and 0.77 for n-CH3NH3PbI3/p-Si and 18.06 mA/cm2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH3NH3PbI3/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

Keywords

Solar cell; CH3NH3PbI3; ZnO; silicon; heterojunction; simulation

Cite This Article

J. Gulomov, O. Accouche, R. Aliev, M. AZAB and I. Gulomova, "Analyzing the zno and ch3nh3pbi3 as emitter layer for silicon based heterojunction solar cells," Computers, Materials & Continua, vol. 74, no.1, pp. 575–590, 2023.



This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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