Open Access
ARTICLE
Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites
Sung Won Hwang, Dae-Ki Hong*
Department of System Semiconductor Engineering, SangMyung University, Cheonan-si, 31066, Korea
* Corresponding Author: Dae-Ki Hong. Email:
Computers, Materials & Continua 2022, 72(2), 3283-3297. https://doi.org/10.32604/cmc.2022.025931
Received 09 December 2021; Accepted 16 February 2022; Issue published 29 March 2022
Abstract
Artificial neural networks (ANNs) are attracting attention for their high performance in various fields, because increasing the network size improves its functioning. Since large-scale neural networks are difficult to implement on custom hardware, a two-dimensional (2D) structure is applied to an ANN in the form of a crossbar. We demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic chips. The system is designed using two-dimensional structures, graphene quantum dots (GQDs) and graphene oxide (GO). Raman spectrum analysis results indicate a D-band of 1421 cm
−1 that occurs in the disorder; band is expressed as an atomic characteristic of carbon in the sp
2 hybridized structure. There is also a G-band of 1518 cm
−1 that corresponds to the graphite structure. The G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with position. To avoid an abruptly-formed conduction path, effect of barrier layer on graphene/ITO interface was investigated. We confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using HR-TEM. After applying a negative bias to the electrode, a crystalline RGO-GQD region formed, which a conductive path. Especially, a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.
Keywords
Cite This Article
S. Won Hwang and D. Hong, "Flexible memristive devices based on graphene quantum-dot nanocomposites,"
Computers, Materials & Continua, vol. 72, no.2, pp. 3283–3297, 2022. https://doi.org/10.32604/cmc.2022.025931