Open Access
ARTICLE
Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors
1 Department of Electrical and Computer Engineering, COMSATS University Islamabad (CUI), Islamabad, 45550, Pakistan
2 CTIF Global Capsule, Department of Business Development and Technology, Aarhus University, 7400, Herning, Denmark
3 Computer Engineering Department, College of Computer and Information Sciences, King Saud University, Riyadh, 11543, Saudi Arabia
* Corresponding Author: Sardar Muhammad Gulfam. Email: