Open Access

ARTICLE

The Hyperbolic Two Temperature Semiconducting Thermoelastic Waves by Laser Pulses

Ismail M. Taye¹, Kh. Lotfy^2,4,*, A. A. El-Bary^3,5, Jawdat Alebraheem¹, Sadia Asad¹

1 Department of Mathematics, College of Science Al-Zulfi, Majmaah University, 11952, Saudi Arabia
2 Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt
3 Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt
4 Department of Mathematics, Faculty of Science, Taibah University, Madinah, Saudi Arabia
5 National Committee for Mathematics, Academy of Scientific Research and Technology, Cairo, Egypt

* Corresponding Author: Kh. Lotfy. Email:

Computers, Materials & Continua 2021, 67(3), 3601-3618. https://doi.org/10.32604/cmc.2021.015223

Received 11 November 2020; Accepted 05 January 2021; Issue published 01 March 2021

Abstract

A novel model of a hyperbolic two-temperature theory is investigated to study the propagation the thermoelastic waves on semiconductor materials. The governing equations are studied during the photo-excitation processes in the context of the photothermal theory. The outer surface of o semiconductor medium is illuminated by a laser pulse. The generalized photo-thermoelasticity theory in two dimensions (2D) deformation is used in many models (Lord–Shulman (LS), Green–Lindsay (GL) and the classical dynamical coupled theory (CD)). The combinations processes between the hyperbolic two-temperature theory and photo-thermoelasticity theory under the effect of laser pulses are obtained analytically. The harmonic wave technique is used to obtain the exact solutions of the main physical fields under investigation. The mechanical, thermal and recombination plasma loads are applied at the free surface of the medium to obtain the complete solutions of the basic physical fields. Some comparisons are made between the three thermoelastcity theories under the electrical effect of thermoelectric coupling parameter. The influence of hyperbolic two-temperature, two-temperature and one temperature parameters on the distributions of wave propagation of physical fields for semiconductor silicon (Si) medium is shown graphically and discussed.

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