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A High Gain, Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application

by Xiaorong Zhao, Weili Cheng, Hongjin Zhu, Chunpeng Ge, Gengyuan Zhou, Zhongjun Fu

1 College of Computer Engineering, Jiangsu University of Technology, Changzhou, 213001, China.
2 Jiangsu Agri-Animal Husbandry Vocational College, Taizhou, 225300, China.
3 University of Wollongong, Wollongong, NSW 2522, Australia.

* Corresponding Author: Gengyuan Zhou. Email: email.

Computers, Materials & Continua 2020, 64(2), 1139-1151. https://doi.org/10.32604/cmc.2020.010220

Abstract

With the development of the times, people’s requirements for communication technology are becoming higher and higher. 4G communication technology has been unable to meet development needs, and 5G communication technology has emerged as the times require. This article proposes the design of a low-noise amplifier (LNA) that will be used in the 5G band of China Mobile Communications. A low noise amplifier for mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing Company (TSMC) 0.13 μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. The LNA employs self-cascode devices in currentreuse configuration to enable lower supply voltage operation without compromising the gain. This design uses an active feedback amplifier to achieve input impedance matching, avoiding the introduction of resistive negative feedback to reduce gain. A common source (CS) amplifier is used as the input of the low noise amplifier. In order to achieve the low power consumption of LNA, current reuse technology is used to reduce power consumption. Noise cancellation techniques are used to eliminate noise. The simulation results in a maximum power gain of 22.783, the reverse isolation (S12) less than -48.092 dB, noise figure (NF) less than 1.878 dB, minimum noise figure (NFmin)=1.203 dB, input return loss (S11) and output return loss (S22) are both less than -14.933 dB in the frequency range of 2515-4900 MHz. The proposed Ultra-wideband (UWB) LNA consumed 1.424 mW without buffer from a 1.2 V power supply.

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APA Style
Zhao, X., Cheng, W., Zhu, H., Ge, C., Zhou, G. et al. (2020). A high gain, noise cancelling 2515-4900 mhz CMOS LNA for china mobile 5G communication application. Computers, Materials & Continua, 64(2), 1139-1151. https://doi.org/10.32604/cmc.2020.010220
Vancouver Style
Zhao X, Cheng W, Zhu H, Ge C, Zhou G, Fu Z. A high gain, noise cancelling 2515-4900 mhz CMOS LNA for china mobile 5G communication application. Comput Mater Contin. 2020;64(2):1139-1151 https://doi.org/10.32604/cmc.2020.010220
IEEE Style
X. Zhao, W. Cheng, H. Zhu, C. Ge, G. Zhou, and Z. Fu, “A High Gain, Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application,” Comput. Mater. Contin., vol. 64, no. 2, pp. 1139-1151, 2020. https://doi.org/10.32604/cmc.2020.010220

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cc Copyright © 2020 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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