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Higher-Order Line Element Analysis of Potential Field with Slender Heterogeneities

by H.-S. Wang1, H. Jiang3, B. Yang2

School of Optoelectronics Beijing Institute of Technology, Beijing 100081, China
Department of Mechanical and Aerospace Engineering, University of Texas at Arlington Arling-ton, TX 76019, USA
State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong Universityof Science and Technology, Wuhan, HuBei 430074, China
Corresponding author E-mail: hjiang@hust.edu.cn

Computers, Materials & Continua 2016, 51(3), 145-161. https://doi.org/10.3970/cmc.2016.051.145

Abstract

Potential field due to line sources residing on slender heterogeneities is involved in various areas, such as heat conduction, potential flow, and electrostatics. Often dipolar line sources are either prescribed or induced due to close interaction with other objects. Its calculation requires a higher-order scheme to take into account the dipolar effect as well as net source effect. In the present work, we apply such a higher-order line element method to analyze the potential field with cylindrical slender heterogeneities. In a benchmark example of two parallel rods, we compare the line element solution with the boundary element solution to show the accuracy as a function in terms of rods distance. Furthermore, we use more complicated examples to demonstrate the capability of the line element technique.

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Cite This Article

APA Style
Wang, H., Jiang, H., Yang, B. (2016). Higher-order line element analysis of potential field with slender heterogeneities. Computers, Materials & Continua, 51(3), 145-161. https://doi.org/10.3970/cmc.2016.051.145
Vancouver Style
Wang H, Jiang H, Yang B. Higher-order line element analysis of potential field with slender heterogeneities. Comput Mater Contin. 2016;51(3):145-161 https://doi.org/10.3970/cmc.2016.051.145
IEEE Style
H. Wang, H. Jiang, and B. Yang, “Higher-Order Line Element Analysis of Potential Field with Slender Heterogeneities,” Comput. Mater. Contin., vol. 51, no. 3, pp. 145-161, 2016. https://doi.org/10.3970/cmc.2016.051.145



cc Copyright © 2016 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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