Stress Field Effects on Phonon Properties in Spatially Confined Semiconductor Nanostructures
L.L. Zhu1,2,3, X.J. Zheng1,2
CMC-Computers, Materials & Continua, Vol.18, No.3, pp. 301-320, 2010, DOI:10.3970/cmc.2010.018.301
Abstract The phonon properties of spatially confined nanofilms under the preexisting stress fields are investigated theoretically by accounting for the confinement effects and acoustoelastic effects. Due to the spatial confinement in low-dimensional structures, the phonon dispersion relations, phonon group velocities as well as the phonon density of states are of significant difference with the ones in bulk structures. Here, the continuum elasticity theory is made use of to determine the phonon dispersion relations of shear modes (SH), dilatational modes (SA) and the flexural modes (AS), thus to analyze the contribution of stress fields on the phonon More >