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EBSD-Based Microscopy: Resolution of Dislocation Density
Computers, Materials & Continua 2009, 14(3), 185-196. https://doi.org/10.3970/cmc.2009.014.185
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Consideration is given to the resolution of dislocation density afforded by EBSD-based scanning electron microscopy. Comparison between the conventional Hough- and the emerging high-resolution cross-correlation-based approaches is made. It is illustrated that considerable care must be exercised in selecting a step size (Burger's circuit size) for experimental measurements. Important variables affecting this selection include the dislocation density and the physical size and density of dislocation dipole and multi-pole components of the structure. It is also illustrated that simulations can be useful to the interpretation of experimental recoveries.Keywords
electron diffraction, EBSD, dislocation density tensor
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APA Style
Adams, B.L., Kacher, J. (2009). EBSD-Based Microscopy: Resolution of Dislocation Density. Computers, Materials & Continua, 14(3), 185–196. https://doi.org/10.3970/cmc.2009.014.185
Vancouver Style
Adams BL, Kacher J. EBSD-Based Microscopy: Resolution of Dislocation Density. Comput Mater Contin. 2009;14(3):185–196. https://doi.org/10.3970/cmc.2009.014.185
IEEE Style
B. L. Adams and J. Kacher, “EBSD-Based Microscopy: Resolution of Dislocation Density,” Comput. Mater. Contin., vol. 14, no. 3, pp. 185–196, 2009. https://doi.org/10.3970/cmc.2009.014.185
Copyright © 2009 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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