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Strength Asymmetry of Twinned Copper Nanowires under Tension and Compression

Yongfeng Zhang1, Hanchen Huang1,2, Satya N. Atluri3

Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute,Troy, NY 12180.
Corresponding author. Email: hanchen@rpi.edu.
Department of Mechanical and Aerospace Engineering, University of California Irvine, Irvine, CA92612.

Computer Modeling in Engineering & Sciences 2008, 35(3), 215-226. https://doi.org/10.3970/cmes.2008.035.215

Abstract

Molecular dynamics simulations reveal the asymmetrical yield strength of twinned copper nanowires under tension and compression. The simulation results show that the strength of nanowires depends on loading conditions, morphologies, and twin spacing. Under tensile loading condition the Schmidt factor of the leading partial is larger than that under compression. Effectively, the yield strength under tension is smaller than that under compression. When the cross-section is circular in morphology, dislocation nucleation requires larger stress, and the asymmetry of yield strength depends on the nucleation stress. When the cross section is square in morphology, dislocation nucleation requires smaller stress, and the asymmetry of yield strength depends on the stress of penetrating twin boundaries.

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Cite This Article

APA Style
Zhang, Y., Huang, H., Atluri, S.N. (2008). Strength asymmetry of twinned copper nanowires under tension and compression. Computer Modeling in Engineering & Sciences, 35(3), 215-226. https://doi.org/10.3970/cmes.2008.035.215
Vancouver Style
Zhang Y, Huang H, Atluri SN. Strength asymmetry of twinned copper nanowires under tension and compression. Comput Model Eng Sci. 2008;35(3):215-226 https://doi.org/10.3970/cmes.2008.035.215
IEEE Style
Y. Zhang, H. Huang, and S.N. Atluri, “Strength Asymmetry of Twinned Copper Nanowires under Tension and Compression,” Comput. Model. Eng. Sci., vol. 35, no. 3, pp. 215-226, 2008. https://doi.org/10.3970/cmes.2008.035.215



cc Copyright © 2008 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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