Open Access

ARTICLE

3-Dimensional Analysis of Flow Patterns and Temperature Profiles for the Growth of InGaSb by Rotational Bridgman Method

T. Ozawa¹, N. Ishigami¹, Y. Hayakawa², T. Koyama², M. Kumagawa²

1 Shizuoka Institute of Science and Technology, Toyosawa 2200-2, Fukuroi 437-8555, Japan.
2 Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamastu 432-8011, Japan

Computer Modeling in Engineering & Sciences 2000, 1(2), 1-6. https://doi.org/10.3970/cmes.2000.001.161

Abstract

To investigate the solution convection in the rotational Bridgman method, both flow patterns and temperature distributions were calculated by solving three equations in 3-dimensional analysis: Navier-Stokes, continuity and energy. We focused on the relationship between ampoule rotational rate and temperature distribution in the growth solution reservoir. In the 3-dimensional model, In-Ga-Sb solution was put between GaSb seed and feed crystals, where seed and feed crystals were cylindrical in shape, and the In-Ga-Sb solution was semi-cylindrical. The ampoule rotational rate was changed in a range of 0 to 100 rpm. By increasing the ampoule rotational rate, the flow velocity in the In-Ga-Sb solution increased and the temperature distribution tended to be uniform.

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Keywords

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