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On ev and ve-Degree Based Topological Indices of Silicon Carbides

Jung Rye Lee1, Aftab Hussain2, Asfand Fahad3, Ali Raza3, Muhammad Imran Qureshi3,*, Abid Mahboob4, Choonkil Park5

1 Department of Data Science, Daejin University, Kyunggi, 11159, Korea
2 Department of Mathematics, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
3 Department of Mathematics, COMSATS University Islamabad, Vehari, 61110, Pakistan
4 Department of Mathematics, Division of Science & Technology, University of Education, Lahore, Pakistan
5 Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, Korea

* Corresponding Author: Muhammad Imran Qureshi. Email: email

TSP_CMES_16836.pdf

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