Open Access

ARTICLE

On ev and ve-Degree Based Topological Indices of Silicon Carbides

Jung Rye Lee¹, Aftab Hussain², Asfand Fahad³, Ali Raza³, Muhammad Imran Qureshi^3,*, Abid Mahboob⁴, Choonkil Park⁵
1 Department of Data Science, Daejin University, Kyunggi, 11159, Korea
2 Department of Mathematics, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
3 Department of Mathematics, COMSATS University Islamabad, Vehari, 61110, Pakistan
4 Department of Mathematics, Division of Science & Technology, University of Education, Lahore, Pakistan
5 Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, Korea
* Corresponding Author: Muhammad Imran Qureshi. Email:
(This article belongs to this Special Issue: Trend Topics in Special Functions and Polynomials: Theory, Methods, Applications and Modeling)

Computer Modeling in Engineering & Sciences 2022, 130(2), 871-885. https://doi.org/10.32604/cmes.2022.016836

Received 31 March 2021; Accepted 13 August 2021; Issue published 13 December 2021

Abstract

In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of Si₂C₃ − I[a,b].

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Keywords

Topological indices; silicon carbide; ev-degree; ve-degree

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Citations